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Microelectronics ReliabilitySCIE

國際簡稱：MICROELECTRON RELIAB 參考譯名：微電子可靠性

中科院分區(qū)
4區(qū)
CiteScore分區(qū)
Q2
JCR分區(qū)
Q3

基本信息：: ISSN：0026-2714; E-ISSN：1872-941X; 是否OA：未開放; 是否預警：否; TOP期刊：否

出版信息：: 出版地區(qū)：ENGLAND; 出版商：Elsevier Ltd; 出版語言：English; 出版周期：Monthly; 出版年份：1964; 研究方向：工程技術-工程：電子與電氣

評價信息：: 影響因子：1.6; H-index：80; CiteScore指數(shù)：3.3; SJR指數(shù)：0.394; SNIP指數(shù)：0.801

發(fā)文數(shù)據(jù)：: Gold OA文章占比：14.36%; 研究類文章占比：98.39%; 年發(fā)文量：310; 自引率：0.125; 開源占比：0.0623; 出版撤稿占比：0.0058...; 出版國人文章占比：0; OA被引用占比：0.0216...

投稿咨詢加急見刊

英文簡介期刊介紹 CiteScore數(shù)據(jù) 中科院SCI分區(qū) JCR分區(qū) 發(fā)文數(shù)據(jù) 常見問題

英文簡介Microelectronics Reliability期刊介紹

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.

期刊簡介Microelectronics Reliability期刊介紹

《Microelectronics Reliability》自1964出版以來，是一本工程技術優(yōu)秀雜志。致力于發(fā)表原創(chuàng)科學研究結(jié)果，并為工程技術各個領域的原創(chuàng)研究提供一個展示平臺，以促進工程技術領域的的進步。該刊鼓勵先進的、清晰的闡述，從廣泛的視角提供當前感興趣的研究主題的新見解，或?qū)彶槎嗄陙砟硞€重要領域的所有重要發(fā)展。該期刊特色在于及時報道工程技術領域的最新進展和新發(fā)現(xiàn)新突破等。該刊近一年未被列入預警期刊名單，目前已被權(quán)威數(shù)據(jù)庫SCIE收錄，得到了廣泛的認可。

該期刊投稿重要關注點：

預計審稿時間：較快,2-4周約8.3周
工程技術
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院4區(qū)
非預警

Cite Score數(shù)據(jù)（2024年最新版）Microelectronics Reliability Cite Score數(shù)據(jù)

CiteScore：3.3
SJR：0.394
SNIP：0.801

學科類別	分區(qū)	排名	百分位
大類：Engineering 小類：Safety, Risk, Reliability and Quality	Q2	83 / 207	60%
大類：Engineering 小類：Electrical and Electronic Engineering	Q2	395 / 797	50%
大類：Engineering 小類：Atomic and Molecular Physics, and Optics	Q3	118 / 224	47%
大類：Engineering 小類：Condensed Matter Physics	Q3	230 / 434	47%
大類：Engineering 小類：Surfaces, Coatings and Films	Q3	74 / 132	44%
大類：Engineering 小類：Electronic, Optical and Magnetic Materials	Q3	161 / 284	43%

CiteScore 是由Elsevier(愛思唯爾)推出的另一種評價期刊影響力的文獻計量指標。反映出一家期刊近期發(fā)表論文的年篇均引用次數(shù)。CiteScore以Scopus數(shù)據(jù)庫中收集的引文為基礎，針對的是前四年發(fā)表的論文的引文。CiteScore的意義在于，它可以為學術界提供一種新的、更全面、更客觀地評價期刊影響力的方法，而不僅僅是通過影響因子(IF)這一單一指標來評價。

歷年Cite Score趨勢圖

中科院SCI分區(qū)Microelectronics Reliability 中科院分區(qū)

中科院 2023年12月升級版 綜述期刊：否 Top期刊：否

大類學科	分區(qū)	小類學科	分區(qū)
工程技術	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 NANOSCIENCE & NANOTECHNOLOGY 納米科技 PHYSICS, APPLIED 物理：應用	4區(qū) 4區(qū) 4區(qū)

中科院分區(qū)表 是以客觀數(shù)據(jù)為基礎，運用科學計量學方法對國際、國內(nèi)學術期刊依據(jù)影響力進行等級劃分的期刊評價標準。它為我國科研、教育機構(gòu)的管理人員、科研工作者提供了一份評價國際學術期刊影響力的參考數(shù)據(jù)，得到了全國各地高校、科研機構(gòu)的廣泛認可。

中科院分區(qū)表 將所有期刊按照一定指標劃分為1區(qū)、2區(qū)、3區(qū)、4區(qū)四個層次，類似于“優(yōu)、良、及格”等。最開始，這個分區(qū)只是為了方便圖書管理及圖書情報領域的研究和期刊評估。之后中科院分區(qū)逐步發(fā)展成為了一種評價學術期刊質(zhì)量的重要工具。

歷年中科院分區(qū)趨勢圖

JCR分區(qū)Microelectronics Reliability JCR分區(qū)

2023-2024 年最新版

按JIF指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	239 / 352	32.2%
學科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	113 / 140	19.6%
學科：PHYSICS, APPLIED	SCIE	Q3	131 / 179	27.1%

按JCI指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q4	272 / 354	23.31%
學科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	114 / 140	18.93%
學科：PHYSICS, APPLIED	SCIE	Q4	140 / 179	22.07%

JCR分區(qū)的優(yōu)勢在于它可以幫助讀者對學術文獻質(zhì)量進行評估。不同學科的文章引用量可能存在較大的差異，此時單獨依靠影響因子(IF)評價期刊的質(zhì)量可能是存在一定問題的。因此，JCR將期刊按照學科門類和影響因子分為不同的分區(qū)，這樣讀者可以根據(jù)自己的研究領域和需求選擇合適的期刊。

歷年影響因子趨勢圖

本刊中國學者近年發(fā)表論文

1、Effect of Sb content on the phase structure and interface structure of Sn1.0Ag0.5Cu lead-free solder
Author: Xu, Fengxian; Zhu, Wenjia; Yan, Jikang; Zhao, Lingyan; Lv, Jinmei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 140, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114883
2、Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation
Author: Xiang, Meiju; Wang, Duowei; He, Mu; Rui, Guo; Ma, Yao; Zhu, Xuhao; Mei, Fan; Gong, Min; Li, Yun; Huang, Mingmin; Yang, Zhimei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114886
3、Small sample classification based on data enhancement and its application in flip chip defection
Author: Sha, Yuhua; He, Zhenzhi; Gutierrez, Hector; Du, Jiawei; Yang, Weiwei; Lu, Xiangning

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114887
4、BP neural network for non-invasive IGBT junction temperature online detection
Author: Liu, Li; Peng, Qianlei; Jiang, Huaping; Ran, Li; Wang, Yang; Du, Changhong; Chen, Jian; Zhou, Hongbo; Chen, Yang; Peng, Zhiyuan

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114882
5、Thermal stress and drop stress analysis based on 3D package reliability study
Author: Xue, Leyang; Li, Xiang; Zhang, Hao

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114888
6、Study on the interface mechanism of copper migration failure in solder mask-substrate package
Author: Li, Yesu; Lin, Shengru; Chi, Panwang; Zou, Yuqiang; Yao, Weikai; Li, Ming; Gao, Liming

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114891
7、Effect of temperature cycling on the leakage mechanism of TSV liner
Author: Chen, Si; Jian, Xiaodong; Li, Kai; Li, Guoyuan; Wang, Zhizhe; Yang, Xiaofeng; Fu, Zhiwei; Wang, Hongyue

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114889
8、Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501
Author: Li, Ning; Li, Yang; Guo, Yaxin; He, Chaohui

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114892